澳门永利娱乐_永利娱乐网址_永利国际娱乐,官网,官方网站,官方网址

    <output id="xj9f1"><th id="xj9f1"></th></output>
    <rp id="xj9f1"><thead id="xj9f1"></thead></rp>

        <mark id="xj9f1"></mark>

        <b id="xj9f1"><address id="xj9f1"></address></b>

        <b id="xj9f1"></b>

            <mark id="xj9f1"></mark>

            《半导体学报》2019年第4期目录
            Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale
            Raman Spectroscopic and Dynamic Electrical Investigation of Multi-State C...
            MoS2-modified graphite felt as a high performance electrode material for ...
            Resonant and Selective Excitation of Photocatalytically Active Defect Sit...
            Few-shot machine learning in the three-dimensional Ising model
            Failure Mechanism of Phosphors in GaN-Based White LEDs
            Enhanced stretchable graphene-based triboelectric nanogenerator via contr...
            Scalable fabrication of geometry-tunable self-aligned superlattice photon...
            Wearable sweat monitoring system with integrated micro-supercapacitors
            官方微信
            友情链接

            Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices

            2019-04-11

             
            Authors: Deng, GQ; Zhang, YT; Li, PC; Yu, Y; Han, X; Chen, L; Yan, L; Dong, X; Zhao, DG; Du, GT
            JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
            Volume: 30 Issue: 4 Pages: 3277-3282 Published: FEB 2019 Language: English Document type: Article
            DOI: 10.1007/s10854-018-00600-6
            Abstract:
            In this work, a near-ultraviolet (380nm) double Al0.2Ga0.8N/GaN distributed Bragg reflectors (DBRs) stack mirror was designed and fabricated. The double DBRs stack mirror consists of a 30-pair Al0.2Ga0.8N/GaN DBRs centered at 375nm and a 20-pair Al0.2Ga0.8N/GaN DBRs centered at 385nm. Our simulation results show that the method of double DBRs stack mirror design can broaden the stopband width greatly and increase the reflected angle efficiently, compared with the single Al0.2Ga0.8N/GaN DBRs mirror. In experiment, the double Al0.2Ga0.8N/GaN DBRs stack mirror and the reference Al0.2Ga0.8N/GaN DBRs mirror were grown on sapphire substrate by metalorganic chemical vapor deposition. The measured stopband width of the double DBRs stack mirror (25nm) is more than two times that of the reference DBRs mirror (11nm), which consists well with our simulation results. It is reasonable to believe that this work could provide a valuable information to obtain AlGaN/GaN DBRs with wide stopband width that can be used in the fabrication of GaN-based resonant cavity light-emitting diodes and vertical cavity surface emitting lasers.
            全文链接:https://link.springer.com/article/10.1007/s10854-018-00600-6



            关于我们
            下载视频观看
            联系方式
            通信地址

            北京市海淀区清华东路甲35号 北京912信箱 (100083)

            电话

            010-82304210/010-82305052(传真)

            E-mail

            semi@semi.ac.cn

            交通地图
            版权所有 ? 中国科学院半导体研究所

            备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明

            Sitemap

            HABA电子|HABA电子平台| 真人娱乐在线|真人娱乐官网| 金沙城中心投注| 重庆时时彩官网平台| SG电子平台|SG电子游戏官网|