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            Spin-charge conversion in InSe bilayers

            2019-04-26

            Authors: Zhou, M; Zhang, D; Yu, SB; Huang, ZH; Chen, YD; Yang, W; Chang, K
            PHYSICAL REVIEW B
            Volume: 99 Issue: 15 Published: APR 3 2019 Language: English Document type: Article
            DOI: 10.1103/PhysRevB.99.155402
            Abstract:
            We find that the bilayer InSe possesses an intrinsic Rashba spin-orbit coupling and hence a spin-charge conversion effect due to the breaking of mirror symmetry. The interplay between the Rashba spin-orbit coupling and the nonparabolic Mexican hat dispersion leads to an interesting intraband Lifshitz transition and strongly amplifies the spin-charge conductivity, making it larger than that in conventional two-dimensional electron gas formed at oxide interfaces. This highlights bilayer InSe as a strong candidate for next-generation spintronic devices.
            全文链接:https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.155402



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