MoS2-OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates
Authors: Zhu, JT; Xu, H; Zou, GF; Zhang, W; Chai, RQ; Choi, J; Wu, J; Liu, HY; Shen, GZ; Fan, HY
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume: 141 Issue: 13 Pages: 5392-5401 Published: APR 3 2019 Language: English Document type: Article
Due to remarkable electronic property, optical transparency, and mechanical flexibility, monolayer molybdenum disulfide (MoS2) has been demonstrated to be promising for electronic and optoelectronic devices. To date, the growth of high-quality and large-scale monolayer MoS2 has been one of the main challenges for practical applications. Here we present a MoS2-OH bilayer-mediated method that can fabricate inch-sized monolayer MoS2 on arbitrary substrates. This approach relies on a layer of hydroxide groups (-OH) that are preferentially attached to the (001) surface of MoS2 to form a MoS2-OH bilayer structure for growth of large-area monolayer MoS2 during the growth process. Specifically, the hydroxide layer impedes vertical growth of MoS2 layers along the  zone axis, promoting the monolayer growth of MoS2, constrains growth of the MoS2 monolayer only in the lateral direction into larger area, and effectively reduces sulfur vacancies and defects according to density functional theory calculations. Finally, the hydroxide groups advantageously prevent the MoS2 from interface oxidation in air, rendering high-quality MoS2 monolayers with carrier mobility up to similar to 30 cm(2) V-1 s(-1). Using this approach, inch-sized uniform monolayer MoS2 has been fabricated on the sapphire and mica and high-quality monolayer MoS2 of single-crystalline domains exceeding 200 mu m has been grown on various substrates including amorphous SiO2 and quartz and crystalline Si, SiC, Si3N4, and graphene This method provides a new opportunity for the monolayer growth of other two-dimensional transition metal dichalcogenides such as WS2 and MoSe2.